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Daniel Loveless received the B.S. degree in electrical engineering from the Georgia Institute of Technology in 2004 and the M.S. and Ph.D. degrees in electrical engineering from Vanderbilt University in 2007 and 2009, respectively. From 2009 to 2014 he was a Senior Research Engineer and Research Assistant Professor at Vanderbilt University’s Institute for Space and Defense Electronics, where he was involved in the modeling and design of integrated circuits for the evaluation of radiation effects in advanced CMOS technologies, spanning from 500 nm to 14 nm features sizes. He is currently an Assistant Professor of Electrical Engineering at the University of Tennessee at Chattanooga where he conducts research in the areas of radiation-hardened-by-design microelectronics, analog and mixed-signal circuit design, low-power electronics, and embedded systems. He is a Senior Member of the IEEE.
Dr. Loveless has authored over 80 journal articles, conference papers, and book chapters. These papers deal primarily with radiation effects in advanced microelectronics, high-performance and radiation-hardened digital, mixed-signal and analog integrated circuit design, semiconductor device physics, and electrical characterization of digital and analog devices. His honors include three best conference paper awards, the IEEE Nuclear and Plasma Sciences Society (NPSS) Graduate Scholarship Award for recognition of contributions to the fields of nuclear and plasma sciences, and the Georgia Tech Alumni Association Scholarship.